View HY23V16202T_1252204.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

HY23V16202
Description
1MX16/2MX8 BIT CMOS MASK ROM
The HY23V16202 high performance read only memory is organized either as 2,097,152 x 8 bit (byte mode) or as 1,048,576 x 16 bit(word mode) followed by BHE mode select. The low power feature allows the battery operation. The large size of 16M bit memory density is ideal for character generator, data or program memory in micro-processor application. The HY23V16202 is packaged 42pin DIP , 44 pin SOP, 44 pin TSOP-II or 48 pin TSOP-I.
Key features
* Switchable Organization Byte Mode : 2,097,152 X 8 bit Word Mode : 1,048,576 X 16 bit * Single 3.3V power supply operation * Access Time : 100/120ns (Max) * Standby Current : 50 (Max) * Operating Current : 35 (Max) * TTL compatible inputs and outputs * 3-State outputs for wired-OR expansion * Word or Byte switchable by BHE pin * Fully static operation * Package HY23V16202D : 42pin Plastic DIP(600 mil) HY23V16202S : 44pin Plastic SOP(500mil) HY23V16202T : 44pin Plastic TSOP-II(400mil) HY23V16202M : 48pin Plastic TSOP-I(12x20mm) HY23V16202F : 48pin Plastic TSOP-I(12x20mm)
Pin Description
Pin A0~A19 Q0~Q14 Q15/A-1 BHE CEB* OEB* VCC VSS NC Function Address inputs Data Outputs Output Q15(Word Mode)/ LSB Address(Byte Mode) Byte High Enable input (Word/Byte selection) Chip Enable input Output Enable input Power supply Ground No Connection
Pin Configuration
A18 A17 A7 A6 A5 A4 A3 A2 A1 A0 CEB VSS OEB Q0 Q8 Q1 Q9 Q2 Q10 Q3 Q11 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 42 41 40 39 38 37 36 35 34 33 32 31 30 29 28 27 26 25 24 23 22 A19 A8 A9 A10 A11 A12 A13 A14 A15 A16 BHE VSS Q15/A-1 Q7 Q14 Q6 Q13 Q5 Q12 Q4 VCC NC A18 A17 A7 A6 A5 A4 A3 A2 A1 A0 CEB VSS OEB Q0 Q8 Q1 Q9 Q2 Q10 Q3 Q11 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22
42DIP
13 14 15 16 17 18 19 20 21 22
32 31 30 29 28 27 26 25 24 23
VSS Q15/A-1 Q7 Q14 Q6 Q13 Q5 Q12 Q4 VCC
HY23V16202T
HY23V16202D Rev0 Page 1 of 8
HY23V16202S
* User selectable polarity
44 43 42 41 40 39 38 37 36 35 NC A19 A8 A9 A10 A11 A12 A13 A14 A15 A16 BHE NC A18 A17 A7 A6 A5 A4 A3 A2 A1 A0 CEB VSS OEB Q0 Q8 Q1 Q9 Q2 Q10 Q3 Q11
1 2 3 4 5 6 7 8 9 10 11 12 44 43 42 41 40 39 38 37 36 35 34
44SOP
34 33
44TSOP-
33 32 31 30 29 28 27 26 25 24 23
NC A19 A8 A9 A10 A11 A12 A13 A14 A15 A16 BHE VSS Q15/A-1 Q7 Q14 Q6 Q13 Q5 Q12 Q4 VCC
HY23V16202
1MX16/2MX8 BIT CMOS MASK ROM
BHE A16 A15 A14 A13 A12 A11 A10 A9 A8 A19 NC NC A18 A17 A7 A6 A5 A4 A3 A2 A1 A0 CEB
1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24
48 47 46 45 44 43 42 41 40 39 38
48TSOP-I (ROM TYPE)
37 36 35 34 33 32 31 30 29 28 27 26 25
VSS VSS Q15/A-1 Q7 Q14 Q6 Q13 Q5 Q12 Q4 VCC VCC NC Q11 Q3 Q10 Q2 Q9 Q1 Q8 Q0 OEB VSS VSS
A15 A14 A13 A12 A11 A10 A9 A8 A19 NC NC NC NC NC NC A18 A17 A7 A6 A5 A4 A3 A2 A1
1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24
48 47 46 45 44 43 42 41 40 39 38
48TSOP-I (FLASH TYPE)
37 36 35 34 33 32 31 30 29 28 27 26 25
A16 BHE VSS Q15/A-1 Q7 Q14 Q6 Q13 Q5 Q12 Q4 VCC Q11 Q3 Q10 Q2 Q9 Q1 Q8 Q0 OEB VSS CEB A0
HY23V16202M
HY23V16202F
Block Diagram
A0~A19 ADDRESS BUFFER
X-DECODER
MEMORY ARRAY 16MBIT ROM CELL
X-PREDEC
Y-PREDEC
Y-DECODER
SENSE AMP CEB OEB BHE CONTROL CIRCUIT OUTPUT CIRCUIT Q0~Q15/A-1
Rev0 Page 2 of 8
HY23V16202
Absolute Maximum Ratings
Symbol TA TSTG VCC VOUT VIN Parameter Ambient Operating Temperature Storage Temperature Supply Voltage to Ground Potential Output Voltage Input Voltage Rating -10 ~ 80 -55 ~ 150 -0.3 ~ 4.5 -0.3~Vcc+0.3 -0.3~Vcc+0.3
1MX16/2MX8 BIT CMOS MASK ROM
Unit
O
C C
O
V V V
Stress above those listed under "absolute maximum ratings" may cause permanent damage to the device. These are stress ratings only. Functional operation of this device at these or any other conditions above those indicated in the operational sections of this specification is not implied and exposure to absolute maximum rating conditions for extended periods may affect device reliability.
Recommended DC Operating Conditions(VCC=3.3*0.3V, TA=0~70O C )
Symbol Vcc Vss VIH VIL Parameter Supply Voltage Supply Voltage Input High Voltage Input Low Voltage Min 3.0 0 2.2 -0.3
Typ 3.3 0
Max 3.6 0 Vcc+0.3 0.8
Unit V V V V
DC Electrical Characteristics(VCC=3.3*0.3V, TA=0~70 O C )
Symbol VOH VOL IIL IOL ICC Parameter Output High Voltage Output Low Voltage Input Leakage Current Output Leakage Current Operating Supply Current (tRC=100ns) ISB1 ISB2 Standby Current(TTL) Standby Current(CMOS)
Condition IOH=-0.4mA IOL=2.1mA
Min 2.4
Typ
Max
Unit V
0.4 10
V uA uA mA uA uA
VIN=0V to VCC
VOUT=0V to VCC CEB=OEB=VIL All Output Open CEB=VIH, all Output Open CEB=VCC, all Output Open
10 35 500 50
Rev0 Page 3 of 8
HY23V16202
Capacitance(TA=25O C , f=1.0MHz)
Symbol CI CO Parameter Input Capacitance Output Capacitance Condition VIN = 0V VOUT = 0V Min
1MX16/2MX8 BIT CMOS MASK ROM
Max 10 10
Unit pF pF
Capacitance is periodically sampled and not 100% tested
Function Table
MODE Standby 16bit Operating L/H 8bit Operating L/H L Data output (upper 8bit) H/L X High-Z CEB/CE H/L OEB/OE X BHE X H Data output (lower 8bit) High-Z H Q0 ~ Q7 Q8 ~ Q14 High-Z Data Out L Active Q15 ~A-1 POWER Standby
Output Disable
X
AC Characteristics(VCC=3.3*0.3V, TA=0~70 O C )
Symbol tRC tACE tAA tAOE tOH tHZ tLZ Parameter Min Read cycle time Chip enable access time Address access time Output enable access time Output hold time from address change Output or chip disable to output High-Z Output or chip Enable to output Low-Z 10 0 20 10 100 100 100 50 0 20 Max Min 120 120 120 60 Max ns ns ns ns ns ns ns
100ns
120ns Unit
AC Test Condition
* Input pulse level * Input rise and fall time * Input and output timing level * Output load 0.4V to 2.4V 10ns 1.5V 1 TTL gate and CL=100pF
Rev0 Page 4 of 8
HY23V16202
Timing Waveforms Word Mode(BHE=VIH)
1MX16/2MX8 BIT CMOS MASK ROM
tRC
ADD A0~A19 CEB:ACTIVE LOW CE/CEB CE:ACTIVE HIGH ADD1 ADD2
tACE
tHZ
tAOE
OEB:ACTIVE LOW OE/OEB OE:ACTIVE HIGH
tAA
tLZ
Q0~Q15
tLZ
tOH
VALID VALID
Byte Mode(BHE=VIL)
ADD A0~A19 A-1 CEB:ACTIVE LOW CE/CEB CE:ACTIVE HIGH
tRC
ADD1 ADD2
tACE
tHZ
tAOE
OEB:ACTIVE LOW OE/OEB OE:ACTIVE HIGH
tAA
tLZ
Q0~Q7
tLZ
tOH
VALID VALID
Q8~Q15
HIGH-Z
Rev0 Page 5 of 8
HY23V16202
Package Dimension 44SOP
28.000 MIN 28.550 MAX 0~10
1MX16/2MX8 BIT CMOS MASK ROM
Unit : mm
O
0.730 MIN 1.030 MAX
12.400 MIN
12.800 MAX
0.090 MIN 0.250 MAX 2.500 MIN 2.900 MAX
0.250 MIN 0.450 MAX
1.270 BSC
3.100 MAX
42DIP
50.292 MIN 53.213 MAX
16.050 BSC
O
0~15
14.732 MAX
0.762 MIN 1.778 MAX 0.203 MIN 0.381 MAX 0.381 MIN
12.319 MIN
5.080 MAX
0.356 MIN 0.559 MAX
2.540 BSC
2.540 MIN 4.572 MAX
Rev0 Page 6 of 8
15.240 MIN
15.875 MAX
HY23V16202
1MX16/2MX8 BIT CMOS MASK ROM
Unit : mm
44TSOP-II
O
#44
18.410 BASIC
0~8
0.400 MIN 0.600 MAX
10.160
#1 0.950 MIN 1.050 MAX 1.200 MAX 0.260 MIN 0.450 MAX 0.800 BSC 0.050 MIN 0.150 MAX
Rev0 Page 7 of 8
11.760
BASIC
0.120 MIN 0.210 MAX
BASIC
HY23V16202
1MX16/2MX8 BIT CMOS MASK ROM
Unit : mm
48TSOP-I
0~8 0.500 BSC 0.170 MIN 0.270 MAX
O
20.150 MAX
19.850 MIN
18.300 MIN
18.500 MAX
0.100 MIN 0.200 MAX
1.050 MAX
0.950 MIN
11.910 MIN 12.120 MAX
1.200 MAX
Rev0 Page 8 of 8
0.050 MIN 0.150 MAX
0.400 MIN
0.700 MAX

▲Up To Search▲

Price & Availability of HY23V16202T

	To Download HY23V16202T Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .